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Atmel's New High-Speed SiGe Power Technology Available as Foundry Service; Improved Performance, High Power and Switching Speeds Up to 45 GHz.
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PR Newswire
- Article date:
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October 9, 2003
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Copyright informationCOPYRIGHT 2003 PR Newswire Association, Inc. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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HEILBRONN, Germany, Oct. 9 /PRNewswire/ -- Atmel(R) Corporation announced the release of its new 0.5 micron Silicon Germanium (SiGe) HBT bipolar semiconductor technology SiGe2-Power. This technology offers designers additional performance at a reasonable cost for RF applications with even higher frequency and higher power requirements. The new SiGe2-Power technology is a shrink version of Atmel's SiGe1-Power bipolar 0.8 micron process which has been in high-volume production since 1999.
This technology supports simultaneous use of two available transistor types, with switching speeds of 35/45 GHz cut-off frequency, 90 GHz cut-off for power gain, and breakdown voltages of ...
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