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Article: Dual gate control provides threshold voltage options.(Emerging Technologies)
- Article from:
- Semiconductor International
- Article date:
- November 1, 2003
- Author:
CopyrightCOPYRIGHT 2003 Reed Business Information. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Using novel process technology Motorola researchers have, for the first time, fabricated a vertical MOSFET structure with perfectly aligned independent gates. The control of the thin channel using second gate allows device characteristics such as threshold voltage and sub-threshold swing (SS) to be modulated dynamically.
Such double-gated devices have become known as finFETs, since their structure resembles a shark's fin, as shown in the Figure (they have also been called omega, tri-gate and delta FETs). They are likely to be the successor to traditional planar FETs, which are running into problems with high leakage currents and short-channel effects as they ...