Article: FASL LLC to Increase Flash Memory Capacity in Response to Strong AMD and Fujitsu Customer Demand; 110nm Technology to be Employed to Serve Growing Wireless Demand.

Business Editors/High-Tech Writers

SUNNYVALE, Calif.--(BUSINESS WIRE)--Dec. 9, 2003

FASL LLC plans to ramp leading-edge manufacturing capacity for Spansion(TM) Flash memory products in 2004 as part of its long-term strategy to meet wireless market demand from AMD (NYSE:AMD) and Fujitsu (TSE:6702) customers. By the end of 2004, 110nm 128Mbit equivalent capacity is planned to exceed 80% of the current output of FAB 25 and JV3, the company's two leading-edge Flash memory fabs. The 110nm 128Mbit equivalent capacity is planned to be over 60% of total fab capacity output.

"Wireless solutions from our leading-edge customers demand high-fab capacity, ...

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