|
|
Article: FASL LLC to increase flash memory capacity in response to strong AMD and Fujitsu customer demand; 110nm technology to be employed to serve growing wireless demand.
- Article from:
- M2 Presswire
- Article date:
- December 10, 2003
CopyrightCOPYRIGHT 2003 Normans Media Ltd. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
|
M2 PRESSWIRE-10 December 2003-FASL: FASL LLC to increase flash memory capacity in response to strong AMD and Fujitsu customer demand; 110nm technology to be employed to serve growing wireless demand(C)1994-2003 M2 COMMUNICATIONS LTD
RDATE:12092003
SUNNYVALE, CA -- FASL LLC plans to ramp leading-edge manufacturing capacity for Spansion(tm) Flash memory products in 2004 as part of its long-term strategy to meet wireless market demand from AMD (NYSE: AMD) and Fujitsu (TSE: 6702) customers. By the end of 2004, 110nm 128Mbit equivalent capacity is planned to exceed 80% of the current output of FAB 25 and JV3, the company's two leading-edge Flash memory fabs. The 110nm ...