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Article: Toshiba Takes NAND Flash Memory to 4-Gigabit Level Using 90 Nanometer Process Technology; 8-Gigabit Flash memory also available by stacking new 4-gigabit memories.

Article from:
PR Newswire
Article date:
April 6, 2004
Copyright

IRVINE, Calif. and TOKYO, April 6 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC)*, and its parent Toshiba Corp. (Toshiba), reinforcing the company's leadership in the development and fabrication of powerful, high capacity NAND flash memory, today introduced the semiconductor industry's first 4-gigabit(1) (Gb) single-die, multi-level cell (MLC), NAND flash memory. Toshiba also announced an 8Gb NAND flash memory IC (TH58NVG3D4BFT00) that stacks two of the 4Gb NAND flash memories in a single package.

Fabricated with 90-nanometer (nm) process technology, the new chip offers double the capacity of Toshiba's present largest single-die NAND flash ...

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