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Article: Using an enhanced equivalent circuit technique. (gallium arsenide field-effect transistors in microwave circuits) (Improved Noise Modeling of GaAs FETs, part 1)
- Article from:
- Microwave Journal
- Article date:
- November 1, 1991
- Author:
CopyrightCOPYRIGHT 1991 Horizon House Publications, Inc. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Improved Noise Modelling of GaAs FETS Part 1: Using an Enhanced Equivalent Circuit Technique
Introduction
Experiments performed as an early part of the DARPA MIMIC program Phase I show that the standard equivalent circuit model was not sufficiently accurate at frequencies above 18 GHz for MMIC designs. The major flaws were the inadequacy of the optimization process for modeling de-embedding S-parameters to the existing circuit model and the incompleteness of the equivalent circuit model itself.
It was found that without including the stability factor K and the maximum gain function MAG, the standard optimization technique based on the four ...