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Article: ALD/PVD barrier reduces RC and improves reliability.(Atomic layer deposition/physical vapor deposition)(Radio Circles)
- Article from:
- Semiconductor International
- Article date:
- June 1, 2004
- Author:
CopyrightCOPYRIGHT 2004 Reed Business Information. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Metallization of copper interconnects involves the deposition of a copper barrier and seed followed by electroplating of copper. Currently, physical vapor deposition (PVD) techniques are most widely used to deposit the barrier and seed. TaN, tantalum or a bilayer of TaN/Ta, deposited using PVD, are typically used as the barrier material. However, as linewidths shrink to 100 nm and less, the comparatively higher resistance barrier will occupy an increasingly larger percentage volume of the interconnect. This results in an increase in the effective resistivity of the line. The International Technology Roadmap for Semiconductors (ITRS) indicates that the effective resistivity ...
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Article: Transition metals show promise as copper barriers.
Semiconductor International;
May 1, 2004 ;
700+ words
... ... for barrier applications even at 65 nm. Copper integration schemes at [less than or equal to] 130 nm use a low-k IMD/PVD Ta/TaN barrier/PVD copper seed/ECD copper material stack. Tantalure is chosen for better adhesion on low-k films and Ta ...
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