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Article: Air Products and Penn State University Researching Effects of Gas Source Purity on Group III-Nitride-Based Thin Films and Device Structures.
- Article from:
- PR Newswire
- Article date:
- October 7, 2002
CopyrightCOPYRIGHT 2002 PR Newswire Association LLC. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Important Implications for Compound Semiconductor Applications
Air Products and The Pennsylvania State University ("Penn State") have announced that they will continue cooperative research efforts to understand the effects of gas source purity on Group III-Nitride (AlGaInN)-based thin films and device structures.
This program -- underway since the beginning of 2002 and part of a larger multi-year, multi-million dollar strategic alliance between the University and Air Products -- has been evaluating typical residual and other metallic impurity levels in layers grown by MOVPE (metalorganic vapor phase epitaxy) using high purity ammonia sources, and the ...