|
|
Article: Fast-switching valves for high-productivity ALD.(Atomic ayer deposition)
- Article from:
- Semiconductor International
- Article date:
- September 1, 2005
- Author:
CopyrightCOPYRIGHT 2005 Reed Business Information, Inc. (US). This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
|
High-productivity atomic layer deposition (ALD) processes are being driven by semiconductor applications (e.g., capacitor, gate and interconnects) requiring ultrathin films or conformal coatings with precise thickness control. ALD is particularly effective on surfaces with high aspect ratios or where graded compositions (i.e., one layer consists of one material and the next layer of another) are required. Future memory devices referenced in the International Technology Roadmap for Semiconductors (ITRS), such as magnetic RAM (MRAM) and phase-change memories, nanofloating gates, single-electron and molecular memories, may initially employ topologies with relatively relaxed ...