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Article: Surface Technology Systems Announces the Development of 300mm DRIE Plasma Source for High Volume IC Manufacturing.
- Article from:
- PR Newswire
- Article date:
- September 12, 2006
CopyrightCOPYRIGHT 2006 PR Newswire Association LLC. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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TAIPEI, Taiwan, Sept. 12 /PRNewswire/ -- Semicon Taiwan -- At Semicon Taiwan today, Surface Technology Systems plc (STS), a leader in plasma process technologies required in the manufacturing and packaging of MEMS and advanced electronic devices, announced the development of a new Deep Reactive Ion Etch (DRIE) plasma source which is compatible with 300mm silicon wafers commonly used in the large scale manufacturing of silicon-based integrated circuits (ICs).
The DRIE process is a key silicon micromachining technique invented by Robert Bosch GmbH, developed by STS and used in the manufacturing of Micro Electro-Mechanical Systems (MEMS) for the past 10 years. As ...