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Article: SanDisk to Launch 43-Nanometer Multi-Level NAND Flash Memory in Mass Production.
- Article from:
- Business Wire
- Article date:
- February 6, 2008
CopyrightCOPYRIGHT 2008 Business Wire. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Cutting-Edge Process Technology Co-Developed With Toshiba Demonstrates Continued Technology and Manufacturing Leadership in MLC Flash Memory
SAN FRANCISCO -- SanDisk Corporation (NASDAQ:SNDK) today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer (nm) process technology co-developed with Toshiba Corporation in Japan. This 43nm technology advancement provides twice the density per chip compared to 56nm 16Gigabit (Gb) process technology, thus lowering the die-cost while maintaining performance and reliability. During the second quarter of 2008, SanDisk intends to begin shipping products using the industry's highest available ...