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Article: HEMT-HBT integrated microwave circuits. (high-electron mobility transistors; heterojunction bipolar transistors)
- Article from:
- Microwave Journal
- Article date:
- September 1, 1995
- Author:
CopyrightCOPYRIGHT 1995 Horizon House Publications, Inc. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Low noise high electron mobility (HEMT) and low distortion, high efficiency heterojunction bipolar transistors (HBT) have been successfully integrated in the same monolithic microwave circuit, paving the way for significant savings in size, weight and cost in today's wireless communications systems. Until now HEMT and HBT devices have been fabricated on separate chips because they were made from dissimilar materials using incompatible processing techniques. The new combination chips, made using semiconductor materials such as gallium arsenide (GaAs) and indium phosphide (InP), are a result of recent advances in microelectronic chip fabrication techniques.
The ...