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Article: BeSang, National NanoFab Center, and Stanford University NanoFab Develop Breakthrough 3D IC Technology.
- Article from:
- Health & Medicine Week
- Article date:
- August 25, 2008
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In collaboration with the National NanoFab Center (NNFC) in Daejeon, Korea and Stanford NanoFab (SNF) in Palo Alto, CA, BeSang Inc., a semiconductor company based in Beaverton, OR, has successfully developed a breakthrough three-dimensional (3D) integrated circuit (IC) technology, enabling low-cost memories and high-performance logic products with large embedded memory blocks (see also BeSang Inc.).
This 3D IC has been processed on 8 inch wafers with industry standard 0.18 um CMOS technologies both at NNFC and SNF. The chip contains 128 million vertically oriented devices as a test vehicle. It is uniquely processed at low temperatures, below 400 degree Celsius. A ...
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Article: BeSang Demos Multi-Layer 3D IC Technology
Wireless News;
August 11, 2009 ;
372 words
...Wireless News 08-11-2009 BeSang Demos Multi-Layer 3D IC Technology Type: News BeSang, a semiconductor company based in Beaverton ... industries," said Dr. Sang-Yun Lee, CEO of BeSang. "With this 3D IC technology, a high-definition ...
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