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Article: A high efficiency 1.8 W, 6 to 18 GHz HBT MMIC power amplifier. (heterojunction bipolar transistor; monolithic microwave integrated circuits)
- Article from:
- Microwave Journal
- Article date:
- August 1, 1996
- Author:
CopyrightCOPYRIGHT 1996 Horizon House Publications, Inc. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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High efficiency, 1 to 2 W, AlGaAs/GaAs HBT power amplifiers have been developed for the 5 to 10 GHz,[1] 8 to 14 GHz[2] and 6 to 18 GHz frequency bands.[3] Of these amplifiers, the two-stage, 6 to 18 GHz MMIC was selected for a brassboard and was refined further for the described application. The original design[3] was modified to accommodate HBTs with ballast resistors, and performance was improved slightly. At 14 GHz, the peak efficiency was increased from 37 percent to greater than 50 percent.
Several lots of wafers have been processed with the new MMIC design. This MMIC is fully matched on chip and is DC/RF tested at the wafer level. The amplifiers are tested for ...