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Article: Studies conducted at G. Dewey et al on electron devices recently published.
- Article from:
- Electronics Newsweekly
- Article date:
- December 3, 2008
CopyrightCOPYRIGHT 2008 NewsRX. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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According to a study from the United States, "DC and high-frequency device characteristics of In0.7Ga0.3As and InSb quantum-well field-effect transistors (QWFETs) are measured and benchmarked against state-of-the-art strained silicon (Si) nMOSFET devices, all measured on the same test bench. Saturation current (I-on) gain of 20% is observed in the In0.7Ga0.3As QWFET over the strained Si nMOSFET at (V-g - V-t) = 0.3 V, V-ds = 0.5 V, and matched I-off, despite higher external resistance and large gate-to-channel thickness."
"To understand the gain in I-on, the effective carrier velocities (v(eff)) near the source-end are extracted and it is observed that at ...