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Article: Research from T. Senda and co-researchers yields new findings on physics.
- Article from:
- Physics Week
- Article date:
- December 9, 2008
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"We have investigated the crystallinity of compositionally graded SiGe layers of strained Si (s-Si) wafers in the growth direction by irradiating, a synchrotron X-ray microbeam with a high parallelism on a cross section of s-Si wafers. As a result. we can confirm the presence Of Surface parallel SiGe lattice rotation and lattice rotation distribution (LRD)," scientists in Niigata, Japan report.
"The Surface parallel LRD and relaxation ratio of SiGe start to decrease in the depth direction below approximately 3 put from the wafer surface," wrote T. Senda and colleagues.
The researchers concluded: "It is inferred that the insufficient relaxation of SiGe ...