Article: A linear, high efficiency, HBT CDMA power amplifier. (heterojunction bipolar transistor; code-division multiple access)

Article: Modeling GaAs MESFETs for RF power amplifiers. ...
Microwave Journal;  December 1, 1995 ;     700+ words ... ... periods. This requirement places a constraint on the RF power amplifier, which is a major source of current consumption, to operate ... phase content and not by the amplitude of the waveform, the power amplifier is often operated into gain compression for these systems ...

Article: Thermal analysis of GaAs MESFETs. (GaAs metal ...
Microwave Journal;  August 1, 1993 ;     700+ words ... ... applications, as its electron mobility is six times that of silicon. High electron velocity and mobility are two advantages of GaAs MESFETs, while problems with material composition and purity, and gate leakage currents are among their disadvantages.|1~ Figure ...

Article: IC maintains uniform bias for GaAs MESFETs. (design ...
EDN;  August 22, 2002 ;     700+ words ...THE GATE-TURN-ON THRESHOLD voltage for GaAs MESFETs (gallium-arsenide metal-semiconductor field-effect transistors) varies considerably from part to part, even within a given ...

Article: Modeling GaAs MESFETs for intermodulation analysis. ...
Microwave Journal;  May 1, 1991 ;     700+ words ...Introduction Although harmonic balance analysis is the dominant method for analyzing nonlinear circuits, Volterra methods [1,2,3] are becoming more popular. Volterra techniques, although well suited only for weakly-coupled nonlinear circuits, have the advantage of greater numerical efficiency over

Correlation between ungated recess width and linearity of GaAs ...
Microwave Journal;  July 1, 1999 ;     700+ words ...High volume linear PA production requires a good understanding of process parameters that determine device distortion characteristics. The linearity specifications, such as third-, fifth- and seventh-order intermodulation products (IM3, IM5 and IM7), ACPR1 and ACPR2, need to be correlated with the

Article: A direct I/Q modulator at microwave frequencies using GaAs ...
Microwave Journal;  October 1, 1994 ;     700+ words ...Introduction As mobile communications systems continue to develop, higher carrier frequencies and more complex modulation schemes are being used. Since the next generation of such systems is still under development, and much of this development work is proprietary to the companies funding it, there

Article: A Ka-band medium power amplifier. (Alpha Industries ...
Microwave Journal;  April 1, 1993 ;     700+ words ... ... 00 Ka-band medium power amplifier is a device that uses power GaAs MESFETs as active components ... can use a 38.5 GHz power amplifier followed by a doubler ... stage monolithic medium power amplifier operates over the frequency ...