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Article: New solid-state electronics research has been reported by J. Borremans et al.
- Article from:
- Electronics Newsweekly
- Article date:
- March 11, 2009
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"The increasing mask costs of modern scaled CMOS makes silicon area precious. Meanwhile, the lowering oxide thickness seriously toughens ESD protection of RF circuits, pushing towards area-demanding inductor-based ESD protection techniques," scientists in Leuven, Belgium report.
"This paper presents a transformer-based ESD protection technique for inductor-based LNAs. With no area penalty, an ESD protection level of 4.5 kV HBM is achieved. Introducing two-stage protection increases the robustness up to 7.3 kV, maintaining excellent RF performance. Further it extends the TLP protection level from 3.2 to 5 A. A noise figure of 2.6 dB is achieved with a power gain ...