Article: New High Gain, High Power Added Efficiency X and Ku-Band GaAs FETs From Toshiba for Microwave Radios and Block Up-Converters.

Three Amplifiers Optimized for Power Added Efficiency Provide Energy Savings and Higher Gain

IRVINE, Calif., June 9 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with three new devices optimized for power added efficiency. The Power Added Efficiency enhanced GaAs FETs are targeted for microwave radios and block up-converters (BUCs) and will be exhibited in TAEC's booth, #623, at the 2009 IEEE MTT-S International Microwave Symposium, which will be held June 7 through 12 in Boston, Massachusetts.

A new ...

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