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Article: New High Gain, High Power Added Efficiency X and Ku-Band GaAs FETs From Toshiba for Microwave Radios and Block Up-Converters.
- Article from:
- PR Newswire
- Article date:
- June 9, 2009
CopyrightCOPYRIGHT 2009 PR Newswire Association LLC. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Three Amplifiers Optimized for Power Added Efficiency Provide Energy Savings and Higher Gain
IRVINE, Calif., June 9 /PRNewswire/ -- Toshiba America Electronic Components, Inc. (TAEC*) and its parent company, Toshiba Corp., announced the expansion of its gallium arsenide field effect transistor (GaAs FETs) lineup with three new devices optimized for power added efficiency. The Power Added Efficiency enhanced GaAs FETs are targeted for microwave radios and block up-converters (BUCs) and will be exhibited in TAEC's booth, #623, at the 2009 IEEE MTT-S International Microwave Symposium, which will be held June 7 through 12 in Boston, Massachusetts.
A new ...