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Article: Cree Research Achieves Milestone for High Power Microwave Transistor
- Article from:
- PR Newswire
- Article date:
- March 12, 1998
CopyrightCOPYRIGHT 1998 PR Newswire Association LLC. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Company Demonstrates Silicon Carbide Chip with 53 Watts Output Power
DURHAM, N.C., March 12 /PRNewswire/ -- Cree Research, Inc. (Nasdaq: CREE), the world's leading manufacturer and supplier of silicon carbide (SiC) wafers and SiC-based semiconductor products, today announced it has demonstrated an SiC metal-semiconductor field-effect transistor (MESFET) with an output power of 53 watts under continuous wave operation at a frequency of 3.0 gigahertz. This result was achieved from a single chip with a die area of only 3 square millimeters.
John Palmour, Cree's Director of Advanced Devices and a co-founder of the company, commented on the development, ...
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700+ words
... ... C., Jan. 24 /PRNewswire/ -- Cree Research, Inc. (NASDAQ: CREE) today reported ... Corporate Research Laboratories and Cree Research is 2-3 times that achieved with either ... television, and satellite communications. Cree Research, which completed an initial public ...
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