Article: Research conducted at V. Correas and co-authors has provided new information about nuclear science.

"The PHISco simulation tool was known to be able to predict the SEU cross section for incident ions," scientists in France report.

"This tool is improved in this work to also predict the MCU rate. Experimental and predicted results are shown to be in good agreement on a 90 nm bulk SRAM," wrote V. Correas and colleagues.

The researchers concluded: "The simulated SRAM structure includes the N-well, which is known to be a barrier to the charge carriers."

Correas and colleagues published their study in IEEE Transactions on Nuclear Science (Prediction of Multiple Cell Upset Induced by Heavy ...

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