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Article: Model of high-temperature diffusion of interstitial silicon atoms in silicon.(Report)
- Article from:
- American Journal of Applied Sciences
- Article date:
- June 1, 2009
- Author:
CopyrightCOPYRIGHT 2009 Science Publications. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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INTRODUCTION
Point defects in silicon (vacancies and interstitials) play important role in electrical activation and diffusion of implanted impurities, in getter formation, in formation of the secondary damages. These defects substantially reduce the parameters of the devices and the device yield. The process of secondary defect formation is controlled by the diffusion of interstitial Si atoms. Nevertheless, during three decades there is not being resolved a problem on the high-temperature diffusion coefficient (D) of Si interstitial atoms in silicon single crystals. In a series of works D was defined to be ~[10.sup.-7] [cm.sup.2] [sec.sup.-1] at 900[degrees]C ...
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