|
|
Article: New applied physics study findings have been reported from F. Wei et al.
- Article from:
- Electronics Newsweekly
- Article date:
- October 7, 2009
CopyrightCOPYRIGHT 2009 NewsRX. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
|
According to recent research from Beijing, People's Republic of China, "Twin-free epitaxial cubic Nd2Hf2O7 (NHO) thin films as high dielectric constant (high-k) materials have been grown on Ge(111) substrates by pulsed laser deposition. Reflection high-energy electron diffraction and x-ray diffraction show that the predominant orientation of the fluorite phase NHO film grown at 650 degrees C (111)(NHO)//(111)(Ge) and [(1) over bar 10](NHO)//[1 (1) over bar0](Ge)."
"High-resolution transmission electron microscopy observation indicates a smooth interface and a sight interfacial layer (IL) between Ge and NHO thin film. X-ray photoelectron spectroscopy results ...