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Article: Research on physics discussed by scientists at Jilin University.
- Article from:
- Physics Week
- Article date:
- October 6, 2009
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"Reproducible p-type phosphorus-doped ZnO (p-ZnO: P) films are prepared on semi-insulating InP substrates by metal-organic chemical vapour deposition technology. The electrical properties of these films show a hole concentration of 9.02 x 10(17) cm(-3), a mobility of 1.05 cm(2)/V s, and a resistivity of 6.6 Omega.cm," scientists in Changchun, People's Republic of China report.
"Obvious acceptor-bound-exciton-related emission and P-induced zinc vacancy (V-Zn) emission are observed by low-temperature photoluminescence spectra of the films, and the acceptor binding energy is estimated to be about 125 meV. The local chemical bonding environments of the phosphorus ...
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