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Article: Research reports from Lomonosov Moscow State University provide new insights into plasma science.
- Article from:
- Nanotechnology Weekly
- Article date:
- October 12, 2009
CopyrightCOPYRIGHT 2009 NewsRX. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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According to recent research from Russia, "The interaction of O and H atoms with SiOCH nanoporous low-dielectric-constant (low-k) films is studied in the far plasma afterglow in the absence of ion and photon fluxes on the surface. The loss probabilities of O and H atoms are directly measured by plasma-induced actinometry."
"Modification of low-k films during the experimental scans was studied by the Fourier transform infrared spectroscopy technique. The model of O- and H-atom recombination in nanoporous materials was developed to analyze the experimental data. It is shown that the main mechanism of the O and H loss is their surface recombination. The consumption ...
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Article: Lomonosov Moscow State University reports research ...
Journal of Engineering;
June 3, 2009 ;
700+ words
... ... M. Voskresenskii and colleagues, Lomonosov Moscow State University. The researchers ... contact N.M. Voskresenskii, Lomonosov Moscow State University, Moscow 119899 ... Keywords: Chemical Engineering, Lomonosov Moscow State University. This article was ...
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