Article: Research reports from Lomonosov Moscow State University provide new insights into plasma science.

According to recent research from Russia, "The interaction of O and H atoms with SiOCH nanoporous low-dielectric-constant (low-k) films is studied in the far plasma afterglow in the absence of ion and photon fluxes on the surface. The loss probabilities of O and H atoms are directly measured by plasma-induced actinometry."

"Modification of low-k films during the experimental scans was studied by the Fourier transform infrared spectroscopy technique. The model of O- and H-atom recombination in nanoporous materials was developed to analyze the experimental data. It is shown that the main mechanism of the O and H loss is their surface recombination. The consumption ...

Related newspaper, magazine, and journal articles:

 
 
Newsweek Harper's Magazine The Washington Post Chicago Tribune Crain's Chicago Business PRNewswire Pediatric News The Nation Advertising Age The Economist (US) A FREE trial gives you access to over 80 million articles! Access over 6,500 publications with a FREE trial!