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Article: Findings from University of Louvain in nanotechnology reported.(Report)
- Article from:
- Nanotechnology Weekly
- Article date:
- October 12, 2009
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According to recent research from Louvain, Belgium, "The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitored in order to optimize the fin patterning and postetch treatments."
"Because of the nanometer-scale dimensions of the fins and the vertical orientation of the sidewall surface, their roughness measurement is a serious challenge. In this paper, we describe a simple and effective method for measuring the sidewall morphology of silicon fins by conventional ...