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Article: Data on applied materials science published by researchers at Shenzhen University.
- Article from:
- Electronics Newsweekly
- Article date:
- October 21, 2009
CopyrightCOPYRIGHT 2009 NewsRX. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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According to recent research from Shenzhen, People's Republic of China, "ZnO thin films were prepared by DC reactive magnetron sputtering under various values of the plasma power at room temperature. The samples were characterized with X-ray diffraction (XRD), optical transmittance, photoluminescence (PL), and atomic force microscopy (AFM), respectively."
"The results show that samples change from ZnO (110) dominant crystal orientation to ZnO (002) dominant crystal orientation with the increase of plasma power. The samples also exhibit compressive intrinsic stresses. The coherent domain size of the film crystallite along with the root mean square (RMS) of the ...
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