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Article: Findings in electron devices reported from Peking University.
- Article from:
- Electronics Newsweekly
- Article date:
- November 4, 2009
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"In this letter, piezosensitive elements featuring large-size suspended gallium nitride (GaN) microstructures are fabricated with a two-step dry-release technique using the GaN-on-Si platform," investigators in Beijing, People's Republic of China report.
"The suspended microstructures are integrated with highly piezosensitive AlGaN/GaN heterostructures as sensing units to realize the GaN-based integrated microsensors. To characterize the residual-stress distribution of the fabricated microstructures, micro-Raman spectroscopy is employed," wrote J. Lv and colleagues, Peking University.
The researchers concluded: "A microaccelerometer structure with a 250 ...