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Article: Novellus Improves Tungsten Resistivity Performance With Advanced LRWxT(TM) Process.
- Article from:
- PR Newswire
- Article date:
- November 3, 2009
CopyrightCOPYRIGHT 2009 PR Newswire Association LLC. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Contact Resistance Can Be Reduced As Much As 30 Percent For 3Xnm Memory and Logic Devices
SAN JOSE, Calif., Nov. 3 /PRNewswire-FirstCall/ -- Novellus Systems announced today that it has developed a new tungsten deposition process, called LRWxT, that can effectively reduce contact and line resistance at the 3Xnm technology node compared to conventional tungsten chemical vapor deposition (CVD-W) technology. The new approach uses the company's ALTUSA' Max system for a unique deposition process sequence that results in highly conformal, large grain size films with lower tungsten bulk resistivity. The new process was developed and tested on device features provided ...