|
|
Article: Studies from University of Bologna yield new information about electron devices.(Report)
- Article from:
- Journal of Mathematics
- Article date:
- November 17, 2009
CopyrightCOPYRIGHT 2009 NewsRX. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
|
"In this paper, a numerical investigation on the behavior of a rugged LDMOS transistor operating in the high current-voltage pulsed regime is carried out with the aim of clarifying the physical origin of the current ''enhancement'' that is visible in the output characteristics at high drain and gate biases," scientists in Bologna, Italy report.
"The investigation shows that the output characteristics are significantly affected by the ''quasi-saturation'' effect at low drain voltages. The impact-ionization rate in the drain extension at high drain voltages reduces the series resistance of the drift region and, hence, raises the electrostatic potential near the ...