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Article: Scientists at Nanyang Technological University detail research in electron devices.
- Article from:
- Journal of Technology
- Article date:
- November 17, 2009
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"This paper presents the low-frequency noise (LFN) characteristics of symmetric double-gate n-FinFETs from weak to strong inversion at low drain bias. The noise-generation mechanism is investigated," researchers in Singapore, Singapore report.
"The measured drain-current noise spectral density shows that LFN in the weak-inversion subthreshold region can be well described by the mobility-fluctuation model due to volume-inversion conduction behavior, which is very different from those normally observed in the bulk NMOS. The analytical expression for the drain-current noise spectral density is derived, with the Hooge parameter alpha(H) being extracted. In the ...
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