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Article: Research results from B.C. Kim and colleagues update understanding of electron devices.
- Article from:
- Journal of Technology
- Article date:
- November 17, 2009
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"Temporal noise such as thermal and low-frequency noise (LF noise) in the CMOS imager readout circuit has been analyzed. In addition, the effect of correlated double sampling operation on the noise was included," researchers in South Korea report.
"We have derived an analytical noise equation for the specified readout circuit, and confirmed its validity by comparing it with the simulation result. Thermal noise model which is accurate in short-channel devices operating in saturation region was used. Since the in-pixel devices (source follower and selection transistor) of the readout circuit are relatively small in size, and thus exhibits random telegraph signal ...