|
|
Article: Low temperature joining of silicon carbide
- Article from:
- Advanced Ceramics Report
- Article date:
- December 1, 1997
CopyrightCOPYRIGHT 1997 International Newsletters. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
|
A method for joining monolithic silicon carbide (SiC) to SiC fibre-reinforced SiC composites at low temperatures has been discovered by US researchers.
Joint research between Ames Laboratory, Ames, Iowa, the Dow Corning Corp, Midland, Michigan, and Amercom Inc, Chatsworth, California, has led to the development of a silicon-ethyne (acetylene) polymer precursor blended with a fine spherical alloy powder.
According to Industrial Ceramics, the initial joint formation takes place during continuous heating from room temperature to ...