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Article: 300 mm Overcomes Critical Hurdles.(wafer process control and etching)(Statistical Data Included)
- Article from:
- Semiconductor International
- Article date:
- June 1, 2001
- Author:
CopyrightCOPYRIGHT 2001 Reed Business Information. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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As 300 mm process control requirements increase in the chamber and at the module level, integrated metrology (IM) and automatoin follow close behind to attain 300 mm's triple Holy Grail of test wafer elimination, reduced loss and predictable process performance. Critical areas today are in post-etch treatment, critical for low-k and ultralow-k, because it affects k values and integration schemes. When porous low-k films come, as they must, all-dry etch may be a solution. For dual-damascene low-k etch, manufacturers want integrated solutions -- etch and post-etch steps taking place in the same chamber to reduce queue time and keep the process consistent (Fig. 1).
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