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Article: Ta[O.sub.X][N.sub.Y]: A Promising Alternative to [Ta.sub.2][O.sub.5].
- Article from:
- Semiconductor International
- Article date:
- July 1, 2001
- Author:
CopyrightCOPYRIGHT 2001 Reed Business Information. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Next-generation memory devices will require materials with higher dielectric constants. Tantalum pentoxide ([Ta.sub.2][O.sub.5]) is one of the most promising materials because it has a high dielectric constant ([sim]25), meets the requirements for conventional VLSI processes, and has comparatively low leakage current. [1-3]
However, compared with some types of ferroelectric dielectrics, such as (Ba, Sr) [TiO.sub.3], the dielectric constant of [Ta.sub.2][O.sub.5] films is modest. If the dielectric constant of [Ta.sub.2][O.sub.5] films can be physically improved, their integration into next-generation ULSI devices may be more readily achievable.
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