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Article: FINITE ELEMENT DETERMINATION OF THE INTRINSIC SMALL-SIGNAL EQUIVALENT CIRCUIT OF MESFETS.(research on microwave components)
- Article from:
- Microwave Journal
- Article date:
- August 1, 2001
- Author:
CopyrightCOPYRIGHT 2001 Horizon House Publications, Inc. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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The finite element time domain method is used to determine the intrinsic elements of a broadband, small-signal equivalent circuit (SSEC) of FETs. The values of the different elements are calculated from the Y parameters of the intrinsic MESFET, which are obtained from the Fourier analysis of the device transient response to voltage-step perturbations at the drain and gate electrodes. The success of this analysis depends on the accuracy of the values calculated for the instantaneous currents at the electrodes during the transient. This method was applied to determine the SSEC of a 0.5 um gate-length GaAs MESFET
usually, the SSEC of a FET is designed by choosing a ...