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Article: Toshiba Debuts One-Gigabit NAND Flash Memory Device.
- Article from:
- PR Newswire
- Article date:
- November 12, 2001
CopyrightCOPYRIGHT 2001 PR Newswire Association LLC. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Developed Using MLC Technology, the NAND Chip Pushes the Density Envelope;
Doubles Storage Capacity
IRVINE, Calif., Nov. 12 /PRNewswire/ --
Demonstrating its leadership in flash memory technology, Toshiba America Electronic Components, Inc. (TAEC)* with its parent company, Toshiba Corporation (Toshiba) today raised the bar for memory density and lowered cost-per-bit with its 1-gigabit (Gb) multi-level cell (MLC) NAND electrically erasable programmable read-only memory (EEPROM). Co-developed by Toshiba and Sunnyvale, Calif.-based SanDisk Corporation (Nasdaq: SNDK), the new device represents an industry benchmark, providing the industry's highest ...