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Article: 16 and 32 W linear power GaAs FETs challenge silicon bipolar transistors in L-band. (technical feature)
- Article from:
- Microwave Journal
- Article date:
- September 1, 1989
- Author:
CopyrightCOPYRIGHT 1989 Horizon House Publications, Inc. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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16 and 32 W Linear Power GaAs FETs Challenge Silicon Bipolar Transistors in L-Band
Introduction
Silicon bipolar transistors are used for power amplification at frequencies through 2 and 3 GHz because silicon material is less expensive than GaAs and the devices are fabricated with a well-established process technology, while providing gain on the order of 6 dB per stage at L-band frequencies.
However, GaAs FETs do offer one important advantage over bipolar transistors as L-band power amplifiers; they offer power gains on the order of 14 dB. This is twice the gain per device so the number of stages required in a power amplifier can be reduced ...