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Article: Epitaxy grows neodymium nickel oxide on silicon. (Coatings).
- Article from:
- Advanced Ceramics Report
- Article date:
- August 1, 2002
CopyrightCOPYRIGHT 2002 International Newsletters. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Researchers at North Carolina State University, USA, say they have grown and integrated single-crystal films of neodymium nickel oxide (NdNi[O.sub.3]) on silicon substrates using a patented domain-matching epitaxy technique. NdNi[O.sub.3] films undergo a very sharp metal-insulator (M-I) transition as a function of temperature, making them useful for applications such as bolometers, optical switches and actuators. The observed M--I transition in epitaxial NdNi[O.sub.3] films is much sharper--with more than 4 orders of magnitude change in resistivity--than that usually observed in bulk and polycrystalline films.
The researchers have also developed a method of ...
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