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Article: Hynix Develops 0.10-micron 512 Mb DDR.
- Article from:
- Business Wire
- Article date:
- October 29, 2002
CopyrightCOPYRIGHT 2002 Business Wire. This material is published under license from the publisher through the Gale Group, Farmington Hills, Michigan. All inquiries regarding rights should be directed to the Gale Group. (Hide copyright information)
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Business Editors/High-Tech Writers
SAN JOSE, Calif.--(BUSINESS WIRE)--Oct. 29, 2002
Hynix Semiconductor Inc. (Hynix, www.hynix.com), announced today that it has successfully developed 512-Mb DDR SDRAM (double-data-rate synchronous dynamic random access memory) manufactured with cutting-edge 0.10-micron technology.
Hynix applied its landmark Golden Chip semiconductor manufacturing technology to the mass production 0.10-micron technology products without additional investment in its fabrication facilities. Golden Chip follows the company's Blue Chip (0.15-micron) technology and Prime Chip (0.13-micron) technology. The company estimates the use of ...