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Article: BeSang, National NanoFab Center and Stanford Develop New 3D IC Technology
- Article from:
- Wireless News
- Article date:
- August 18, 2008
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Wireless News
08-18-2008
BeSang, National NanoFab Center and Stanford Develop New 3D IC Technology
WIRELESS NEWS-August 18, 2008-BeSang, National NanoFab Center and Stanford Develop New 3D IC Technology (C)2008 10Meters - http:// www.10meters.com
In collaboration with the National NanoFab Center (NNFC) in Daejeon, Korea and Stanford NanoFab (SNF) in Palo Alto, CA, BeSang, a semiconductor company based in Beaverton, OR, has successfully developed a three-dimensional (3D) integrated circuit (IC) technology, that the company states will enable low-cost memories and high-performance logic products with large embedded memory blocks.
The 3D IC has been processed on 8 inch wafers with industry ...