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Article: SanDisk to Launch 43-Nanometer Multi-Level Nand Flash Memory in Mass Production

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Al Bawaba
Article date:
February 10, 2008
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SanDisk Corporation (NASDAQ: SNDK) today announced the introduction of Multi-Level (MLC) NAND flash memory using 43 nanometer (nm) process technology co-developed with Toshiba Corporation in Japan. This 43nm technology advancement provides twice the density per chip compared to 56nm 16Gigabit (Gb) process technology, thus lowering the die-cost while maintaining performance and reliability. During the second quarter of 2008, SanDisk intends to begin shipping products using the industry's highest available density of single-chip MLC NAND flash memory. Shipments will start with 16Gigabit and will be followed by 32Gigabit in the second half of 2008.

"We're excited about commencing the ...

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