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Article: Oregon Inventors Develop Shallow Trench Isolation Structure Forming Method
- Article from:
- US Fed News Service, Including US State News
- Article date:
- February 21, 2007
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ALEXANDRIA, Va., Feb. 21 -- Chih-Hsiang Chen and Guo-Qiang Lo, both of Portland, Ore., have developed a method for forming shallow trench isolation structure with deep oxide region.
According to the U.S. Patent & Trademark Office: "The present invention relates to a shallow trench isolation structure and a method for forming a shallow trench isolation structure on a semiconductor substrate. A masking structure that includes a hard mask is formed over the semiconductor substrate and an etch is performed so as to form trenches within the semiconductor substrate. A shallow trench isolation structure and a method for forming a shallow trench isolation structure are disclosed. Oxidation ...