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Article: Japanese, South Korean Inventors Develop Boron Contamination Eliminating Method
- Article from:
- US Fed News Service, Including US State News
- Article date:
- April 12, 2007
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ALEXANDRIA, Va., April 12 -- Yoshinobu Nakada of Ageo, Japan, Kenichi Kaneko of Utsunomiya, Japan, and So Ik Bae of Daejeon, South Korea, have developed a method of eliminating boron contamination in annealed wafer.
According to the U.S. Patent & Trademark Office: "A method by which a silicon wafer is prevented from increasing boron concentration near the surface and difference in the boron concentration does not arise between the surface of the annealed wafer and the silicon bulk to eliminate boron contamination in the silicon wafer caused by an annealing treatment is provided."
An abstract of the invention, released by the Patent Office, said: "The method includes, when annealing a ...