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Article: Tennessee Inventor Develops Boron Ion Delivery System
- Article from:
- US Fed News Service, Including US State News
- Article date:
- July 6, 2007
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ALEXANDRIA, Va., July 6 -- James M. Williams of Knoxville, Tenn., have developed a method of implanting boron ions into semiconductor materials.
According to the U.S. Patent & Trademark Office: "A boron ion plasma, generated by use of a cathodic arc, is manipulated and delivered to a large flat product such as a silicon wafer with boron ion energies suitable for incorporation of boron atoms into solid state devices as one of the key steps in manufacturing solid state electronics and with uniformity of boron dose over the area suitable for the scale of manufacturing desired."
The inventor was issued U.S. Patent No. 7,238,597 on July 3.
The patent has been assigned to Brontek Delta Corp., ...