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Article: Colorado Inventors Develop Wide Bandgap Semiconductor Device Construction
- Article from:
- US Fed News Service, Including US State News
- Article date:
- July 16, 2007
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ALEXANDRIA, Va., July 16 -- Bart J. Van Zeghbroeck and Ivan Perez, both of Boulder, Colo., and John T. Torvik of Louisville, Colo., have developed methods for precisely and accurately etching layers of wide bandgap semiconductor material.
According to the U.S. Patent & Trademark Office: "According to one aspect of the invention, the method includes providing a multi-layer laminate including at least a first and second layer of wide bandgap semiconductor material, measuring a first conductance of the first layer of semiconductor material, partially etching the first layer of semiconductor material a first amount, measuring a second conductance of the first layer of semiconductor material ...
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Article: Maryland Inventors Develop Solid Solution Wide Bandgap ...
US Fed News Service, Including US State News;
September 29, 2008 ;
413 words
...ALEXANDRIA, Va., Sept. 29 -- Narsingh Bahadur Singh and Darren Thomson, both of Ellicott City, Md., Brian Wagner of Baltimore, Mike Aumer of Laurel, Md., David Kahler of Arbutus, Md., Andre Berghmans of Owing Mills, Md., David J. Knuteson of Linthicum, Md., have developed a method for producing
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