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Article: Idaho Inventors Develop Selectively Doped Trench Isolation Device
- Article from:
- US Fed News Service, Including US State News
- Article date:
- August 28, 2007
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ALEXANDRIA, Va., Aug. 28 -- David Y. Kao of Meridian, Idaho, and Rongsheng Yang of Boise, Idaho, have developed a trench isolation device.
According to the U.S. Patent & Trademark Office: "A selectively doped trench isolation device is provided. The trench isolation device of the preferred embodiment includes a semiconductor substrate having a trench. A thin field oxide layer is grown on the side walls of the trench, and the trench is filled with a heavily doped polysilicon. The work function difference between the substrate and the heavily doped polysilicon increases the field threshold voltage of the gated trench isolation device so that smaller isolation structures can be formed ...