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Article: Idaho Inventor Develops Trench Isolation Structure
- Article from:
- US Fed News Service, Including US State News
- Article date:
- September 1, 2007
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ALEXANDRIA, Va., Sept. 1 -- Joohyun Jin of Boise, Idaho, has developed a trench isolation structure.
According to the U.S. Patent & Trademark Office: "In general, the present invention discloses at least one trench isolation region formed in a semiconductor substrate to electrically and/or optically isolate at least one active region from another active region. The at least one trench isolation region comprises a bottom portion and first and second trench sidewalls. At least one trench sidewall is adjacent a doped region. The at least one sidewall adjacent a doped region has a higher impurity dopant concentration than impurity doped regions surrounding the at least one trench isolation ...