Article: Idaho Inventors Develop Trench Isolation Region Formation Method

ALEXANDRIA, Va., Oct. 23 -- Garo J. Derderian of Boise, Idaho, and H. Montgomery Manning of Eagle, Idaho, have developed a trench isolation region formation method.

According to the U.S. Patent & Trademark Office: "The invention includes methods of forming trench isolation regions. In one implementation, a masking material is formed over a semiconductor substrate. The masking material comprises at least one of tungsten, titanium nitride and amorphous carbon. An opening is formed through the masking material and into the semiconductor substrate effective to form an isolation trench within semiconductive material of the semiconductor substrate."

An abstract of the invention, released by ...

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