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Article: Idaho Inventors Develop Monolithic Semiconductor Device
- Article from:
- US Fed News Service, Including US State News
- Article date:
- October 27, 2007
CopyrightCopyright © HT Media Ltd. All Rights Reserved. Provided by ProQuest LLC. (Hide copyright information)
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ALEXANDRIA, Va., Oct. 27 -- Vishnu K. Agarwal and Gurtej Sandhu, both of Boise, Idaho, have developed a monolithic semiconductor device.
According to the U.S. Patent & Trademark Office: "Structurally-stable, tall capacitors having unique three-dimensional architectures for semiconductor devices are disclosed. The capacitors include monolithically-fabricated upright microstructures, i.e., those having large height/width ratios, which are mechanical reinforcement against shear forces and the like, by a brace layer that transversely extends between lateral sides of at least two of the free-standing microstructures. The brace layer is formed as a microbridge type structure spanning between ...
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Article: Patent No. 7,473,980 Issued on Jan. 6, Assigned to Fujitsu for ...
US Fed News Service, Including US State News;
February 20, 2009 ;
354 words
... ... for fabricating the semiconductor device, more specifically, a semiconductor device including a capacitor ... for fabricating the semiconductor device." The original application ... information about US Fed News contract awards please ...
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